| Metal-Organic
Synthesis
We emphasize the synthesis of main
group and early transition-metal
complexes having alkoxide (OR-),
alkanethiolate (SR-), and dialkylamide
(NR2-) ligands. These types of
complexes are useful as precursors
to inorganic
thin films because of their ease
of synthesis, physical properties,
and reactivity.
Thin
Film Preparation
We use the new complexes as synthetic
precursors to inorganic thin films.
The films are prepared using chemical
vapor deposition, an important film
synthesis technique. Typically,
the targeted films have applications
in microelectronic and energy conserving
applications. The films are characterized
thoroughly for composition and properties
by using the CMC materials characterization
facilities.
|
Low
Pressure Chemical Vapor Deposition
of Fluorine-Doped Indium Oxide
Films from an Indium Alkoxide
Complex, J. Mater. Chem.
2000, 10, 2392-2395.
Chemical
Vapor Deposition of Gallium Sulfide
Thin Films, Chem. Mater.
2000, 12, 2794–2797.
General
Synthesis of Homoleptic Indium
Alkoxide Complexes and the Chemical
Vapor Deposition of Indium Oxide
Films, J. Am. Chem.
Soc. 2000, 122, 9396–9404.
Atmospheric
Pressure Metal-Organic Chemical
Vapor Deposition of Films Containing
Zinc Silicate, Chem.
Vap. Dep. 2001, 7, 81–84.
Synthesis
of Homoleptic Gallium Alkoxide
Complexes and the Chemical Vapor
Deposition of Gallium Oxide Films,
Chem. Mater. 2001, 13, 2135–2143. |
